| Typical Input Capacitance @ Vds (pF) | 660@15V |
| Configuration | Dual Dual Drain |
| Typical Turn-Off Delay Time (ns) | 18 |
| PCB changed | 8 |
| HTS | 8541.29.00.95 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Number of Elements per Chip | 2 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 45 |
| Maximum Power Dissipation (mW) | 2000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 14 |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 12 |
| Process Technology | TrenchFET |
| Typical Gate to Source Charge (nC) | 1.9 |
| Package Height | 1.55(Max) |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 8.5 |
| Military | No |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 19.5@10V |
| Package Length | 5(Max) |
| Typical Gate Charge @ 10V (nC) | 14.5 |
| Standard Package Name | SOP |
| Typical Reverse Recovery Charge (nC) | 9 |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Typical Output Capacitance (pF) | 140 |
| Lead Shape | Gull-wing |
| Part Status | Active |
| Product Category | Power MOSFET |
| Typical Gate to Drain Charge (nC) | 2.7 |
| Packaging | Tape and Reel |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Package Width | 4(Max) |
| Typical Gate Charge @ Vgs (nC) | 14.5@10V|7.1@4.5V |
