| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Configuration | Single Dual Drain |
| Typical Turn-Off Delay Time (ns) | 10 |
| PCB changed | 4 |
| HTS | 8541.29.00.95 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 63 |
| Maximum Power Dissipation (mW) | 1300 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 11 |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Package | HVMDIP |
| Typical Fall Time (ns) | 31 |
| Typical Gate to Source Charge (nC) | 3.8(Max) |
| Package Height | 3.37(Max) |
| Channel Type | P |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 1.1 |
| Military | No |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 500@10V |
| Package Length | 5(Max) |
| Typical Gate Charge @ 10V (nC) | 12(Max) |
| Standard Package Name | DIP |
| Typical Reverse Recovery Charge (nC) | 96 |
| Pin Count | 4 |
| Mounting | Through Hole |
| Typical Output Capacitance (pF) | 170 |
| Lead Shape | Through Hole |
| Part Status | Active |
| Product Category | Power MOSFET |
| Typical Gate to Drain Charge (nC) | 5.1(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Package Width | 6.29(Max) |
| Typical Gate Charge @ Vgs (nC) | 12(Max)@10V |
