| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4730pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 20V |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | SIR866DP-T1-GE3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | SIR866DP |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Standard Package | 1 |
| Series | TrenchFET® |
| Featured Product | N-Channel TrenchFET® Gen III Power MOSFETs |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
