| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 100V |
| PCN Assembly/Origin | SIL-079-2014-Rev-0 26/Sep/2014 |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 600V |
| Package / Case | TO-220-3 |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Other Names | SIHP30N60EE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Datasheets | SiHP30N60E Packaging Information |
| Product Training Modules | High Voltage MOSFET E Series and PFC Device Selection |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 1,000 |
| Series | - |
| Power - Max | 250W |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Family | Transistors - FETs, MOSFETs - Single |
