| Transistors - FETs, MOSFETs - Single |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 100V |
| Power Dissipation (Max) | 730mW (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | SI2328DS-T1-E3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | SI2328DS |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| EDA / CAD Models | Download from Ultra Librarian |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 1 |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 1.15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
