| Transistors - FETs, MOSFETs - Single |
| Online Catalog | P-Channel Standard FETs |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Drain to Source Voltage (Vdss) | 60V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Technology | MOSFET (Metal Oxide) |
| Video File | MOSFET Technologies for Power Conversion |
| Manufacturer | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Other Names | *IRFD9014PBF |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | IRFD9014 |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| EDA / CAD Models | Download from Ultra Librarian |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 660mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 2,500 |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
