IRFP360PBF 规格参数
| Typical Gate Charge @ Vgs | Maximum of 210 nC @ 10 V | 
| Category | Power MOSFET | 
| Configuration | Single | 
| Maximum Gate Source Voltage | ±20 V | 
| Typical TurnOff Delay Time | 100 ns | 
| Number of Elements per Chip | 1 | 
| Maximum Drain Source Voltage | 400 V | 
| Channel Mode | Enhancement | 
| Forward Diode Voltage | 1.8 V | 
| Channel Type | N | 
| Height | 20.82 mm | 
数据手册
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