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TPH2R506PL,L1Q
Toshiba

TPH2R506PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR
中间价(CNY):5.29
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TPH2R506PL,L1Q 规格参数
Typical Input Capacitance @ Vds (pF)4180@30V
ConfigurationSingle
PCB changed8
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)7.1
Maximum Power Dissipation (mW)3000
Channel ModeEnhancement
AutomotiveNo
Minimum Operating Temperature (°C)-55