Typical Input Capacitance @ Vds (pF) | 1990@30V |
Configuration | Single |
PCB changed | 3 |
HTS | 8541.29.00.95 |
Maximum Gate Source Leakage Current (nA) | 100 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 5 |
Maximum Power Dissipation (mW) | 36000 |
Channel Mode | Enhancement |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Package | TO-220SIS |
Maximum IDSS (uA) | 10 |
Typical Fall Time (ns) | 17 |
Process Technology | U-MOSIX-H |
Package Height | 15 |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 50 |
Military | No |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 8.2@10V |
Material | Si |
Package Length | 10 |
Typical Gate Charge @ 10V (nC) | 28.3 |
Pin Count | 3 |
Mounting | Through Hole |
Tab | Tab |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Tube |
Maximum Gate Threshold Voltage (V) | 2.5 |
Package Width | 4.5 |
Typical Gate Charge @ Vgs (nC) | 28.3@10V|14.3@4.5V |