| Typical Input Capacitance @ Vds (pF) | 3280@30V |
| Configuration | Single |
| PCB changed | 3 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 10 |
| Maximum Power Dissipation (mW) | 87000 |
| Channel Mode | Enhancement |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Package | TO-220 |
| Typical Fall Time (ns) | 18 |
| Package Height | 8.59 |
| Channel Type | N |
| EU RoHS | Supplier Unconfirmed |
| Maximum Continuous Drain Current (A) | 106 |
| Military | No |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 4.3@10V |
| Material | Si |
| Package Length | 10.16 |
| Typical Gate Charge @ 10V (nC) | 48.2 |
| Pin Count | 3 |
| Mounting | Through Hole |
| Tab | Tab |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tube |
| Package Width | 4.45 |
| Typical Gate Charge @ Vgs (nC) | 23.9@4.5V|48.2@10V |
