Typical Input Capacitance @ Vds (pF) | 3000@50V |
Configuration | Single |
PCB changed | 3 |
Maximum Gate Source Leakage Current (nA) | 100 |
Number of Elements per Chip | 1 |
Typical Rise Time (ns) | 14 |
Maximum Power Dissipation (mW) | 126000 |
Channel Mode | Enhancement |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 10 |
Typical Fall Time (ns) | 21 |
Process Technology | U-MOS VIII-H |
Package Height | 8.59 |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 40 |
Military | No |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 8.2@10V |
Material | Si |
Package Length | 10.16 |
Typical Gate Charge @ 10V (nC) | 49 |
Pin Count | 3 |
Mounting | Through Hole |
Tab | Tab |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Magazine |
Maximum Gate Threshold Voltage (V) | 4 |
Package Width | 4.45 |
Typical Gate Charge @ Vgs (nC) | 49@10V |