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TK100S04N1L,LQ(O
Toshiba

TK100S04N1L,LQ(O

Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(2+Tab) New PW-Mold
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TK100S04N1L,LQ(O 规格参数
Typical Input Capacitance @ Vds (pF)5490@10V
ConfigurationSingle
PCB changed2
Maximum Gate Source Leakage Current (nA)1000
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)8
Maximum Power Dissipation (mW)100000
Channel ModeEnhancement
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)175
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