Texas Instruments
SN65220DBVT 规格参数
| Maximum Leakage Current (uA) | 1 |
| Peak Pulse Power Dissipation (W) | 60 |
| Configuration | Single |
| PCB changed | 6 |
| HTS | 8541.10.00.80 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 385 |
| Direction Type | Uni-Directional |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |