| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Category | Power MOSFET |
| Configuration | Quad Drain, Triple Source |
| Maximum Gate Source Voltage | ±20 V |
| Typical TurnOff Delay Time | 25 ns |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.2 V |
| Channel Type | N |
| Height | 1.07 mm |
| Maximum Operating Temperature | +150 °C |
| Width | 5 mm |
| Typical Turn On Delay Time | 10 ns |
| Operating Temperature Range | -55 to +150 °C |
| Dimensions | 5.99 x 5 x 1.07 mm |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 0.031 Ω |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 8 |
| Package Type | PowerPAK-SO-8 |
| Forward Transconductance | 26 S |
| Length | 5.99 mm |
| Maximum Power Dissipation | 1.8 W |
| Maximum Continuous Drain Current | 6.2 A |
