| Typical Gate Charge @ Vgs | 2.1 nC @ 5 V, 2.4 nC @ 5 V |
| Category | Power MOSFET |
| Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical TurnOff Delay Time | 12, 13 ns |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | -30, 30 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | -1.1, 1.1 V |
| Channel Type | N, P |
| Height | 1 mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.7 mm |
| Typical Turn On Delay Time | 7, 8 ns |
| Operating Temperature Range | -55 to +150 °C |
| Dimensions | 3.1 x 1.7 x 1 mm |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 0.175, 0.36 Ω |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 6 |
| Package Type | TSOP |
| Forward Transconductance | 2.4, 4.3 S |
| Length | 3.1 mm |
| Maximum Power Dissipation | 1.15 W |
| Maximum Continuous Drain Current | -1.8, 2.5 A |
