Siliconix

SI2328DS-T1-E3

SI2328DS-T1-E3 N-channel MOSFET Transistor; 1.15 A; 100 V; 3-Pin TO-236

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SI2328DS-T1-E3 规格参数

Typical Gate Charge @ Vgs	3.3 nC @ 10 V
Drain to Source On Resistance	0.25 Ω
Temperature Operating Range	-55 to +150 °C
Configuration	Single
Forward Voltage, Diode	1.2 V
Number of Elements per Chip	1
Dimensions	3.04 x 1.4 x 1.02 mm
Drain to Source Voltage	100 V
Mounting Type	Surface Mount
Turn-On Delay Time	7 ns
Minimum Operating Temperature	-55 °C
Package Type	TO-236
Power Dissipation	0.73 W
Series	SI23 Series
Forward Transconductance	4 S
Drain Current	1.15 A
Length	0.119" (3.04mm)
Turn-Off Delay Time	9 ns
Channel Type	N
Gate to Source Voltage	±20 V
Number of Pins	3
Height	0.04" (1.02mm)
Maximum Operating Temperature	+150 °C
Width	0.055" (1.4mm)

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