| Current, Drain | 3.9 A |
| Typical Gate Charge @ Vgs | 10 nC @ 20 V |
| Polarization | N-Channel |
| Capacitance, Input | 540 pF @ 20 V |
| Temperature Operating Range | -55 to +150 °C |
| Configuration | Single |
| Voltage, Gate to Source | ±20 V |
| Number of Elements per Chip | 1 |
| Resistance, Drain to Source On | 0.058 Ω |
| Fall Time | 25 ns |
| Gate Charge, Total | 15 nC |
| Channel Type | N |
| Number of Pins | 3 |
| Height | 0.04" (1.02mm) |
| Maximum Operating Temperature | +150 °C |
| Width | 0.055" (1.4mm) |
| Voltage, Forward, Diode | 1.2 V |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Time, Turn-Off Delay | 30 ns |
| Mounting Type | Surface Mount |
| Time, Turn-On Delay | 10 ns |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-236 |
| Power Dissipation | 1.25 W |
| Series | SI23 Series |
| Forward Transconductance | 11 S |
| Operating and Storage Temperature | –55 to +150 °C |
| Length | 0.119" (3.04mm) |
| Voltage, Drain to Source | 40 V |
| Voltage, Breakdown, Drain to Source | 40 V |
| Thermal Resistance, Junction to Ambient | 100 °C/W |
