Siliconix

SI1026X-T1-GE3

SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89

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SI1026X-T1-GE3 规格参数

Current, Drain	305 A
Typical Gate Charge @ Vgs	600 nC @ 4.5 V
Polarization	N-Channel
Capacitance, Input	30 pF @ 25 V
Temperature Operating Range	-55 to +150 °C
Configuration	Single
Voltage, Gate to Source	±20 V
Number of Elements per Chip	2
Resistance, Drain to Source On	3 Ω
Gate Charge, Total	600 pC
Channel Type	N
Number of Pins	6
Height	0.02" (0.5mm)
Maximum Operating Temperature	+150 °C
Width	0.047" (1.2mm)
Voltage, Forward, Diode	1.4 V
Dimensions	1.7 x 1.2 x 0.5 mm
Time, Turn-Off Delay	20 ns
Mounting Type	Surface Mount
Time, Turn-On Delay	15 ns
Minimum Operating Temperature	-55 °C
Package Type	SC-89
Power Dissipation	250 mW
Series	SI10 Series
Forward Transconductance	200 mS
Operating and Storage Temperature	–55 TO +150 °C
Length	0.066" (1.68mm)
Voltage, Drain to Source	60 V
Voltage, Breakdown, Drain to Source	60 V

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