Siliconix

SI1026X-T1-GE3/BKN

DUAL 60V (D-S) N-CH MOSFET W/ESD PR

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SI1026X-T1-GE3/BKN 规格参数

Typical Gate Charge @ Vgs	600 nC @ 4.5 V
Polarization	N-Channel
Temperature Operating Range	-55 to +150 °C
Configuration	Single
Number of Elements per Chip	2
Drain to Source Voltage	60 V
Channel Type	N
Gate to Source Voltage	±20 V
Number of Pins	6
Height	0.02" (0.5mm)
Maximum Operating Temperature	+150 °C
Input Capacitance	30 pF @ 25 V
Width	0.047" (1.2mm)
Drain to Source On Resistance	3 Ω
Forward Voltage, Diode	1.4 V
Turn Off Delay Time	20 ns
Total Gate Charge	600 pC
Dimensions	1.7 x 1.2 x 0.5 mm
Mounting Type	Surface Mount
Minimum Operating Temperature	-55 °C
Package Type	SC-89
Power Dissipation	250 mW
Series	SI10 Series
Forward Transconductance	200 mS
Operating and Storage Temperature	–55 TO +150 °C
Drain Current	305 A
Length	0.066" (1.68mm)
Turn On Delay Time	15 ns
Voltage, Breakdown, Drain to Source	60 V

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