JANTXV1N6461US 规格参数
Peak Pulse Power Dissipation (W) | 500 |
Configuration | Single |
PCB changed | 2 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Minimum Breakdown Voltage (V) | 5.6 |
Supplier Temperature Grade | Military |
Package Length | 5.72(Max) |
Maximum Reverse Leakage Current (uA) | 3000 |
Standard Package Name | SMD |
Direction Type | Uni-Directional |
数据手册
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