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STB100N6F7
STMicroelectronics

STB100N6F7

STB100N6F7 系列 60 V 100 A 5.6 mOhm N-沟道 STripFET™ F7 功率 MOSFET - D2PAK-3
中间价(CNY):4.8
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STB100N6F7 规格参数
Typical Input Capacitance @ Vds (pF)1980@25V
ConfigurationSingle
Typical Turn-Off Delay Time (ns)28.6
PCB changed2
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)55.5
Maximum Power Dissipation (mW)125000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)21.6