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RS1G180MNTB
Rohm

RS1G180MNTB

晶体管, MOSFET, N沟道, 80 A, 40 V, 0.005 ohm, 10 V, 2.5 V
中间价(CNY):37.4294
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RS1G180MNTB 规格参数
Typical Input Capacitance @ Vds (pF)1293@20V
ConfigurationSingle Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)48
PCB changed8
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)8.9
Maximum Power Dissipation (mW)3000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)14.1