| Typical Input Capacitance @ Vds (pF) | 990@10V |
| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 110 |
| PCB changed | 3 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 70 |
| Maximum Power Dissipation (mW) | 100000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 17 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | TO-3P |
| Maximum IDSS (uA) | 500 |
| Typical Fall Time (ns) | 60 |
| Package Height | 18.9 |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 2.5 |
| Maximum Drain Source Voltage (V) | 1500 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 12000@15V |
| Material | Si |
| Package Length | 15.6 |
| Standard Package Name | TO-3P |
| Pin Count | 3 |
| Mounting | Through Hole |
| Tab | Tab |
| Lead Shape | Through Hole |
| Product Category | Power MOSFET |
| Packaging | Tube |
| Package Width | 4.8 |
