Typical Input Capacitance @ Vds (pF) | 670@25V |
Configuration | Single |
Typical Turn-Off Delay Time (ns) | 42 |
PCB changed | 2 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 24 |
Maximum Power Dissipation (mW) | 48000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 13 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Package | DPAK |
Typical Fall Time (ns) | 16 |
Process Technology | MegaFET |
Package Height | 2.39(Max) |
Channel Type | N |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 14 |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Voltage (V) | ±10 |
Maximum Drain Source Resistance (mOhm) | 100@5V |
Material | Si |
Package Length | 6.73(Max) |
Typical Gate Charge @ 10V (nC) | 40(Max) |
Standard Package Name | TO-252 |
Pin Count | 3 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 185 |
Tab | Tab |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 2 |
Package Width | 6.22(Max) |
Typical Gate Charge @ Vgs (nC) | 25(Max)@5V|40(Max)@10V |