MJE253G 规格参数
| Primary Type | Si |
| Configuration | Common Base |
| Temperature, Operating, Range | -65 to +150 °C |
| Number of Elements per Chip | 1 |
| Temperature, Operating, Maximum | +150 °C |
| Voltage, Collector to Base | 100 V |
| Transistor Type | PNP |
| Voltage, Collector to Emitter | 100 V |
| Resistance, Thermal, Junction to Case | 8.34 °C/W |
| Voltage, Breakdown, Collector to Emitter | 100 V |
| Voltage, Collector to Emitter, Saturation | 0.6 V |