| Configuration | Single Quad Drain Triple Source |
| Typical Turn-Off Delay Time (ns) | 27|18 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Rise Time (ns) | 12|5 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 11|9 |
| Automotive | No |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 500 |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 11.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Drain Source Resistance (mOhm) | 10@10V |
| Standard Package Name | SOP |
| Typical Reverse Recovery Charge (nC) | 12 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 11.5 |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120@15V |
| Lead Shape | Gull-wing |
| Product Category | Power MOSFET |
| Typical Gate to Drain Charge (nC) | 3.4 |
| Packaging | Tape and Reel |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Input Capacitance @ Vds (pF) | 1240@15V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| PCB changed | 8 |
| HTS | 8541.29.00.95 |
| Number of Elements per Chip | 1 |
| Typical Reverse Recovery Time (ns) | 18 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Typical Fall Time (ns) | 11 |
| Process Technology | TMOS |
| Typical Gate to Source Charge (nC) | 3.5 |
| Package Height | 1.5(Max) |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Military | No |
| Typical Gate Threshold Voltage (V) | 1.5 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Gate Plateau Voltage (V) | 2.5 |
| Package Length | 4.9 |
| Typical Gate Charge @ 10V (nC) | 22 |
| Maximum Diode Forward Voltage (V) | 0.7 |
| Typical Diode Forward Voltage (V) | 0.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Output Capacitance (pF) | 350 |
| Part Status | Active |
| Maximum Gate Threshold Voltage (V) | 3 |
| Package Width | 3.9 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |
