FDN342P 规格参数
| Transistors - FETs, MOSFETs - Single | |
| PCN Assembly/Origin | Korea Fab Site Add 3/Jan/2017 |
| Online Catalog | P-Channel MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 635pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Supplier Device Package | SuperSOT-3 |
| PCN Design/Specification | Wire Bonding 07/Nov/2008 Mold Compound 08/April/2008 Logo 17/Aug/2017 |
| Drain to Source Voltage (Vdss) | 20V |
| Power Dissipation (Max) | 500mW (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
数据手册
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