| Typical Input Capacitance @ Vds (pF) | 267@100V |
| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 21 |
| PCB changed | 3 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 6.5 |
| Maximum Power Dissipation (mW) | 27800 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 10 |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | IPAK |
| Maximum IDSS (uA) | 25 |
| Typical Fall Time (ns) | 16 |
| Process Technology | SuperFET II |
| Package Height | 6.3(Max) |
| Channel Type | N |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 1.6 |
| Military | No |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 4300@10V |
| Package Length | 6.8(Max) |
| Typical Gate Charge @ 10V (nC) | 6.8 |
| Standard Package Name | TO-251 |
| Pin Count | 3 |
| Mounting | Through Hole |
| Tab | Tab |
| Lead Shape | Through Hole |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tube |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Package Width | 2.5(Max) |
| Typical Gate Charge @ Vgs (nC) | 6.8@10V |
