| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Assembly/Test Site Transfer 14/Apr/2015 |
| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Supplier Device Package | TO-92-3 |
| PCN Design/Specification | Logo 17/Aug/2017 |
| Drain to Source Voltage (Vdss) | 60V |
| Power Dissipation (Max) | 830mW (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | TO92 Packing Updates 01/Jul/2015 Mult Devices 24/Oct/2017 |
| Manufacturer | ON Semiconductor |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | BS170, MMBF170 |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | High Voltage Switches for Power Processing |
| Mounting Type | Through Hole |
| EDA / CAD Models | Download from Ultra Librarian |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Standard Package | 1,000 |
| Series | - |
| Packaging | Bulk |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
