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BC856BM3T5G
ON Semiconductor

BC856BM3T5G

Bipolar (BJT) Single Transistor, PNP, -65 V, 100 MHz, 265 mW, -100 mA, 220 hFE
中间价(CNY):0.3211
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BC856BM3T5G 规格参数
ConfigurationSingle
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)65
ECCN (US)EAR99
Maximum Power Dissipation (mW)640
Maximum Base Emitter Saturation Voltage (V)0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150