| Transistors - FETs, MOSFETs - Single |
| Online Catalog | N-Channel Logic Level Gate FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| Supplier Device Package | D2PAK |
| PCN Design/Specification | Osiris Leadframe 09/Jun/2014 |
| Drain to Source Voltage (Vdss) | 40V |
| Power Dissipation (Max) | 158W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | NXP USA Inc. |
| Vgs (Max) | ±16V |
| Other Names | 568-7005-2 934064228118 BUK664R6-40C,118-ND BUK664R640C118 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | BUK664R6-40C |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Standard Package | 800 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
