BLP10H610AZ 规格参数
| Vds - Drain-Source Breakdown Voltage | 104 V |
| Mounting Style | SMD/SMT |
| Brand | NXP Semiconductors |
| Package / Case | SOT-1352-12 |
| Id - Continuous Drain Current | 60 mA |
| Vgs - Gate-Source Breakdown Voltage | 11 V |
| Manufacturer | NXP |
| Product Category | RF MOSFET Transistors |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 2.3 Ohms |
| RoHS | Y |