Lockheed Martin

311325-01

MICROCIRCUIT,MEMORY

中间价(CNY):-

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311325-01 规格参数

Input Circuit Pattern	10 input
Features Provided	hermetically sealed and monolithic and positive outputs and bipolar and 3-state output and w/enable and w/storage and w/buffered output and w/decoded output and w/disable and programmable and programmed
Operating Temp Range	-0.0 to 75.0 deg celsius
Case Outline Source And Designator	m0-001-ae joint electron device engineering council
Test Data Document	11530-311325 drawing
Inclosure Material	ceramic and glass
End Item Identification	cheyenne missile model 427m
Unpackaged Unit Weight	2.2 grams
Word Quantity	256
Terminal Type And Quantity	16 printed circuit
Inclosure Configuration	dual-in-line
Bit Quantity	1024
Terminal Surface Treatment	solder
Storage Temp Range	-65.0 to 150.0 deg celsius
Body Width	0.240 inches minimum and 0.280 inches maximum
Memory Device Type	rom
Output Logic Form	transistor-transistor logic
Body Length	0.745 inches minimum and 0.785 inches maximum
Maximum Power Dissipation Rating	625.0 milliwatts
Body Height	0.120 inches minimum and 0.160 inches maximum
Voltage Rating And Type Per Characteristic	5.5 volts maximum power source
Time Rating Per Chacteristic	35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

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