| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Category | Power MOSFET |
| Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical TurnOff Delay Time | 43 ns |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.3 V |
| Channel Type | N |
| Height | 4.83 mm |
| Maximum Operating Temperature | +175 °C |
| Width | 9.65 mm |
| Typical Turn On Delay Time | 15 ns |
| Operating Temperature Range | -55 to +175 °C |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 26.5 mΩ |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 1770 pF @ 25 V |
| Package Type | D2PAK |
| Forward Transconductance | 36 V |
| Length | 10.67 mm |
| Maximum Power Dissipation | 92 W |
| Maximum Continuous Drain Current | 36 A |
