| Transistors - FETs, MOSFETs - Single |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3320pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 89.7nC @ 10V |
| Supplier Device Package | PG-TO262-3-1 |
| Drain to Source Voltage (Vdss) | 30V |
| Power Dissipation (Max) | 167W (Tc) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| PCN Obsolescence/ EOL | Multiple Devices 26/Oct/2007 |
| Other Names | SP000016266 SPI80N03S2L05X |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | SP(I,P,B)80N03S2L-05 |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 110µA |
| Standard Package | 500 |
| Series | OptiMOS™ |
| Featured Product | Data Processing Systems |
| Packaging | Tube |
| Part Status | Discontinued at Digi-Key |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
