| Transistors - FETs, MOSFETs - Single |
| Online Catalog | P-Channel MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 60V |
| Power Dissipation (Max) | 80W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Other Names | SPD18P06P GDKR SPD18P06P GDKR-ND SPD18P06PGBTMA1DKR |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | SPD18P06P G |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Standard Package | 1 |
| Series | SIPMOS® |
| Featured Product | Data Processing Systems |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 18.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
