| Transistors - FETs, MOSFETs - Single |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 560V |
Power Dissipation (Max) | 160W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Manufacturer | Infineon Technologies |
Vgs (Max) | ±20V |
PCN Obsolescence/ EOL | Mult Devices EOL 31/Aug/2017 |
Other Names | SP000014895 SPB16N50C3 SPB16N50C3-ND SPB16N50C3ATMA1TR SPB16N50C3INTR SPB16N50C3INTR-ND SPB16N50C3XT |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | SPB16N50C3 |
Categories | Discrete Semiconductor Products |
Other Related Documents | Part Number Guide |
Product Training Modules | CoolMOS™ CP Switching Behavior CoolMOS™ CP High Voltage MOSFETs Converters |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 675µA |
Standard Package | 1,000 |
Series | CoolMOS™ |
Featured Product | Data Processing Systems |
Packaging | Tape & Reel (TR) |
Part Status | Last Time Buy |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |