| Product Attributes Select All |
Input Capacitance (Ciss) @ Vds | 3980pF @ 25V |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 IPak Product Assembly Site Add 19/Apr/2016 |
Category | Discrete Semiconductor Products |
Online Catalog | N-Channel Standard FETs |
Gate Charge (Qg) @ Vgs | 48nC @ 4.5V |
FET Type | MOSFET N-Channel, Metal Oxide |
Supplier Device Package | IPAK (TO-251) |
PCN Design/Specification | Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015 |
Drain to Source Voltage (Vdss) | 100V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
PCN Packaging | Package Drawing Update 19/Aug/2015 |
Manufacturer | Infineon Technologies |
Design Resources | IRLR3110ZPBF Saber Model IRLR3110ZPBF Spice Model |
Other Names | SP001578962 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | Standard |
Datasheets | IRLR3110ZPbF, IRLU3110ZPbF |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Standard Package | 75 |
Series | HEXFET® |
Power - Max | 140W |
Packaging | Tube |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Family | Transistors - FETs, MOSFETs - Single |