| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 09/Dec/2013 |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 324nC @ 10V |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 40V |
| Power Dissipation (Max) | 294W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Other Names | SP001575514 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | IRFB7434PBF |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Standard Package | 50 |
| Series | HEXFET®, StrongIRFET™ |
| Featured Product | Data Processing Systems |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
