| Transistors - FETs, MOSFETs - Single |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 Warehouse Transfer 29/Jul/2015 TO220/247 Fab Site Transfer 19/May/2016 |
Online Catalog | N-Channel Standard FETs |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 6920pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Supplier Device Package | TO-220AB |
Drain to Source Voltage (Vdss) | 75V |
Power Dissipation (Max) | 300W (Tc) |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
Manufacturer | Infineon Technologies |
Design Resources | IRFB3207ZPBF Saber Model IRFB3207ZPBF Spice Model |
Vgs (Max) | ±20V |
Other Names | SP001575584 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Datasheets | IRFB3207ZPbF, IRFS(L)3207ZPbF |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Standard Package | 50 |
Series | HEXFET® |
Featured Product | Data Processing Systems |
Packaging | Tube |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |