| Unit Weight | 0.017870 oz |
| Configuration | Dual |
| Id - Continuous Drain Current | 6.8 A, 4.6 A |
| Channel Mode | Enhancement |
| Fall Time | 3.9 ns, 15 ns |
| RoHS | Y |
| Qg - Gate Charge | 6.8 nC, 8.1 nC |
| Package / Case | SO-8 |
| Number of Channels | 2 Channel |
| Typical Turn-On Delay Time | 5.1 ns, 8 ns |
| Technology | Si |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 150 C |
| Height | 1.75 mm |
| Rds On - Drain-Source Resistance | 40 mOhms, 103 mOhms |
| Width | 3.9 mm |
| Factory Pack Quantity | 95 |
| Mounting Style | SMD/SMT |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Typical Turn-Off Delay Time | 4.9 ns, 17 ns |
| Transistor Polarity | N-Channel, P-Channel |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 30 V, - 30 V |
| Brand | Infineon / IR |
| Rise Time | 4.8 ns, 14 ns |
| Length | 4.9 mm |
| Forward Transconductance - Min | 8.2 S, 4.1 S |
| Product Category | MOSFET |
| Packaging | Tube |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V, - 1.3 V |
| Pd - Power Dissipation | 2 W |
