| Typical Input Capacitance @ Vds (pF) | 380@25V@N Channel|360@25V@P Channel |
| Configuration | Dual Dual Drain |
| Typical Turn-Off Delay Time (ns) | 30@P Channel|35@N Channel |
| PCB changed | 8 |
| Number of Elements per Chip | 2 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 11@N Channel|13@P Channel |
| Maximum Power Dissipation (mW) | 2000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 6.7@N Channel|25@P Channel |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SOIC |
| Typical Fall Time (ns) | 40@P Channel|20@N Channel |
| Process Technology | HEXFET |
| Package Height | 1.5(Max) |
| Channel Type | P|N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 1.5@P Channel|2.1@N Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 480@10V@P Channel|210@10V@N Channel |
| Material | Si |
| Package Length | 5(Max) |
| Typical Gate Charge @ 10V (nC) | 21@P Channel|19@N Channel |
| Standard Package Name | SOP |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Lead Shape | Gull-wing |
| Part Status | Obsolete |
| Product Category | Power MOSFET |
| Packaging | Tape and Reel |
| Package Width | 4(Max) |
| Typical Gate Charge @ Vgs (nC) | 21@10V@P Channel|19@10V@N Channel |
