Typical Input Capacitance @ Vds (pF) | 1350@25V |
Configuration | Single Quad Drain Dual Source |
Typical Turn-Off Delay Time (ns) | 12 |
PCB changed | 7 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 12 |
Maximum Power Dissipation (mW) | 3600 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 7 |
Automotive | No |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | Direct-FET MZ |
Typical Fall Time (ns) | 8.7 |
Process Technology | DirectFET |
Typical Gate to Source Charge (nC) | 5.4 |
Package Height | 0.53(Max) |
Channel Type | N |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 13.4 |
Military | No |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 11@10V |
Material | Si |
Typical Switch Charge (nC) | 10.2 |
Package Length | 5.45(Max) |
Typical Gate Charge @ 10V (nC) | 24 |
Standard Package Name | Direct-FET |
Typical Reverse Recovery Charge (nC) | 36 |
Pin Count | 7 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 1580 |
Lead Shape | No Lead |
Part Status | Active |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 8.3 |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 4.9 |
Package Width | 5.05(Max) |
Typical Gate Charge @ Vgs (nC) | 24@10V |