| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | D2PAK |
| PCN Design/Specification | Copper Plating Update 31/Aug/2015 Material Chg 24/Nov/2015 |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Other Names | IRF1018ESTRLPBFDKR |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| Datasheets | IRF1018E (S,SL) PBF |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Standard Package | 1 |
| Series | HEXFET® |
| Power - Max | 110W |
| Featured Product | Automatic Opening Systems |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Family | Transistors - FETs, MOSFETs - Single |
