首页/IR2110L4搜索结果/IR2110L4规格参数/
IR2110L4
Infineon

IR2110L4

The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
中间价(CNY):1480.3
推荐供应商
推广产品
具有相位同步功且支持 JESD204B 的航空级 40MHz 至 15GHz 宽带合成器
具有集成开关且每相电流为 4A 的四相降压转换器
IR2110L4 规格参数
High and Low Sides DependencyIndependent
Typical Input High Threshold Voltage (V)8.5
PCB changed14
HTS8542.39.00.01
ECCN (US)EAR99
Maximum Power Dissipation (mW)1600
Special FeaturesUnder Voltage Lockout
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)125
Supplier PackageMO-036AB
Peak Output Current (A)2(Min)