| Transistors - FETs, MOSFETs - Single |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Supplier Device Package | PG-TO220-3-1 |
| Drain to Source Voltage (Vdss) | 55V |
| Power Dissipation (Max) | 300W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| PCN Obsolescence/ EOL | Mult Device EOL 1/Apr/2016 |
| Other Names | IPP80N06S2-05 IPP80N06S2-05-ND SP000218873 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | IPB,IPP80N06S2-05 |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 500 |
| Series | OptiMOS™ |
| Featured Product | Data Processing Systems |
| Packaging | Tube |
| Part Status | Obsolete |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
