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IPD60R600P6ATMA1
Infineon

IPD60R600P6ATMA1

Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
中间价(CNY):4.6489
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具有可编程增益放大器且适用于桥式传感器的高分辨率 24 位 7200SPS Δ-Σ ADC
IPD60R600P6ATMA1 规格参数
Typical Input Capacitance @ Vds (pF)557@100V
ConfigurationSingle
Typical Turn-Off Delay Time (ns)33
PCB changed2
HTS8541.29.00.95
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)7
Maximum Power Dissipation (mW)63000
Channel ModeEnhancement