首页/IPD031N03LGBTMA1搜索结果/IPD031N03LGBTMA1规格参数/
IPD031N03LGBTMA1
Infineon

IPD031N03LGBTMA1

英飞凌 Infineon MOSFET, OptiMOS 3 系列, N沟道, Si, Vds=30 V, 90 A, 3引脚 DPAK (TO-252)封装
中间价(CNY):8.7719
推荐供应商
推广产品
具有天线的 SimpleLink™ Wi-Fi® CERTIFIED® 无线模块解决方案
3.3V 低温漂、低功耗、小尺寸增强型塑料串联电压基准
IPD031N03LGBTMA1 规格参数
Typical Input Capacitance @ Vds (pF)4000@15V
ConfigurationSingle
PCB changed2
Typical Turn-Off Delay Time (ns)34
HTS8541.29.00.95
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)6
Maximum Power Dissipation (mW)94000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)9