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| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 119nC @ 10V |
| Supplier Device Package | PG-TO263-2 |
| Drain to Source Voltage (Vdss) | 600V |
| Power Dissipation (Max) | 278W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Other Names | IPB60R099C6ATMA1DKR IPB60R099C6DKR IPB60R099C6DKR-ND |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | IPx60R099C6 |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 99 mOhm @ 18.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Standard Package | 1 |
| Series | CoolMOS™ |
| Featured Product | Data Processing Systems |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
