FS50R06W1E3_B11 规格参数
| Mounting Style | SMD/SMT |
| Configuration | IGBT-Inverter |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| RoHS | Details |
| Minimum Operating Temperature | - 40 C |
| Brand | Infineon Technologies |
| Power Dissipation | 205 W |
| Package / Case | Module |
| Collector-Emitter Saturation Voltage | 1.45 V |
| Manufacturer | Infineon |